Testing and analysis for lifetime prediction of crystalline silicon PV modules undergoing degradation by system voltage stress

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 246-253

  Hacke, Peter ^a   Smith, Ryan ^a   Terwilliger, Kent ^a   Glick, Stephen ^a   Jordan, Dirk ^a   Johnston, Steve ^a   Kempe, Michael ^a   Kurtz, Sarah ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Current voltage (I V) characteristics; degradation; high voltage techniques; photovoltaic (PV) cells; photovoltaic systems; reliability

Indexed keywords

ACCELERATED LIFETIME TESTS; ACCELERATED TESTING; ACCELERATED TESTS; ACCELERATION FACTORS; ARBITRARY TEMPERATURE; CHAMBER TESTING; CRYSTALLINE SILICON PV MODULES; CRYSTALLINE SILICONS; HIGH VOLTAGE TECHNIQUES; I-V MEASUREMENTS; IDEALITY FACTORS; LIFETIME PREDICTION; LOG-NORMAL; PHOTOVOLTAIC; PHOTOVOLTAIC SYSTEMS; POWER DEGRADATION; QUANTITATIVE EVALUATION; RECOMBINATION CURRENTS; SHUNT RESISTANCES; STATISTICAL DATAS; SYSTEM VOLTAGE; TEST CHAMBERS; THREE TEMPERATURE; TWO-DIODE MODEL;

ACTIVATION ENERGY; CRYSTALLINE MATERIALS; CURRICULA; DEGRADATION; RELIABILITY; SILICON;

FACTOR ANALYSIS;

EID: 84871749820     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2222351     Document Type: Article

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