Self-aligned indium-gallium-zinc oxide thin-film transistor with source/drain regions doped by implanted arsenic

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 60-62

  Chen, Rongsheng ^a   Zhou, Wei ^a   Zhang, Meng ^a   Wong, Man ^a   Kwok, Hoi Sing ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); arsenic; self aligned; thin film transistors (TFTs)

Indexed keywords

AMORPHOUS INDIUMGALLIUM-ZINC OXIDE (A-IGZO) THIN-FILM TRANSISTOR (TFTS); ARGON PLASMAS; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; ON/OFF CURRENT RATIO; SELF-ALIGNED; SOURCE/DRAIN REGIONS; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS);

ARSENIC; GALLIUM; HYDROGEN; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

ZINC OXIDE;

EID: 84871736877     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2223192     Document Type: Article

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