Influence of the interface acceptor-like traps on the transient response of AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 45-47

  Zhang, Wei ^a   Zhang, Yue ^a   Mao, Wei ^a   Ma, Xiaohua ^a   Zhang, Jincheng ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Acceptor like trap; AlGaN GaN high electron mobility transistor (HEMT); device simulation; transient response; turn on pulse

Indexed keywords

ACCEPTOR-LIKE TRAP; ALGAN/GAN; ALGAN/GAN HEMTS; DEVICE SIMULATIONS; EXPERIMENTAL MEASUREMENTS; TEST STRUCTURE; TRAPPING REGIONS; TURN-ON PULSE; VOLTAGE PULSE;

COMPUTER SIMULATION; ELECTRIC POTENTIAL; GALLIUM NITRIDE; TRANSIENT ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84871712580     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2227235     Document Type: Article

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