Laser- and heavy ion-induced charge collection in bulk FinFETs

IEEE Transactions on Nuclear Science

Volumn 58, Issue 6 PART 1, 2011, Pages 2563-2569

  El Mamouni, F ^a   Zhang, E X ^a   Pate, N D ^a   Hooten, N ^a   Schrimpf, R D ^a   Reed, R A ^a   Galloway, K F ^a   McMorrow, D ^b   Warner, J ^b   Simoen, E ^c   Claeys, C ^c   Griffoni, A ^c   Linten, D ^c   Vizkelethy, G ^d  

^a VANDERBILT UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c IMEC   (Belgium)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Bulk FinFET; charge collection; ion beam induced charge collection (IBICC); single event transient (SET); through wafer two photon absorption (TPA)

Indexed keywords

BULK FINFET; CHARGE COLLECTION; ION-BEAM-INDUCED-CHARGE-COLLECTION (IBICC); SINGLE EVENT TRANSIENTS; TWO-PHOTON ABSORPTIONS;

HEAVY IONS; INTEGRATED CIRCUITS; LIGHT ABSORPTION; LUMINESCENCE OF ORGANIC SOLIDS; PHOTONS; TWO PHOTON PROCESSES;

TRANSIENTS;

EID: 83855161646     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2171994     Document Type: Conference Paper

References (12)

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