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Volumn 24, Issue 48, 2012, Pages 6423-6428

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

(13) Choi, Woo Seok a Rouleau, Christopher M a Seo, Sung Seok A a,b Luo, Zhenlin c,d Zhou, Hua e Fister, Timothy T c Eastman, Jeffrey A c Fuoss, Paul H c Fong, Dillon D c Tischler, Jonathan Z e Eres, Gyula a Chisholm, Matthew F a Lee, Ho Nyung a

a OAK RIDGE NATIONAL LABORATORY (United States)

b UNIVERSITY OF KENTUCKY (United States)

c ARGONNE NATIONAL LABORATORY (United States)

d UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

e ARGONNE NATIONAL LABORATORY (United States)

Author keywords

atomic layer engineering; epitaxial strain; LaAlO 3 SrTiO3; perovskite oxide interface; pulsed laser deposition

Indexed keywords

ATOMIC LAYER; EPITAXIAL STRAIN; HETERO INTERFACES; HIGH OXYGEN PRESSURE; INTERFACE FORMATION; LAALO 3/SRTIO3; PEROVSKITE OXIDES; STRAIN EVOLUTION;

LANTHANUM ALLOYS; LASERS; MONOLAYERS; PEROVSKITE; PULSED LASER DEPOSITION; STRONTIUM TITANATES;

ATOMS;

ALUMINUM DERIVATIVE; CALCIUM DERIVATIVE; LANTHANUM; OXIDE; OXYGEN; PEROVSKITE; STRONTIUM; STRONTIUM TITANIUM OXIDE; TITANIUM;

ARTICLE; CHEMISTRY; KINETICS; PRESSURE;

ALUMINUM COMPOUNDS; CALCIUM COMPOUNDS; KINETICS; LANTHANUM; OXIDES; OXYGEN; PARTIAL PRESSURE; STRONTIUM; TITANIUM;

EID: 84871323772 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201202691 Document Type: Article

Times cited : (59)

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