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Applied Physics Letters

Volumn 95, Issue 26, 2009, Pages

The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates

(5) Sedhain, A a Du, L b Edgar, J H b Lin, J Y a Jiang, H X a

a Texas Tech University (United States)

b Kansas State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN SUBSTRATES; BULK ALN; CHARGED STATE; DEEP UV; EMISSION BANDS; IMPURITY ABSORPTION; OPTICAL ABSORPTION; PL EMISSION; POLYCRYSTALLINE; REVERSE PROCESS;

ABSORPTION; ALUMINUM; CRYSTAL IMPURITIES; LIGHT; LIGHT ABSORPTION; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE SPECTROSCOPY; RESISTORS; SINGLE CRYSTALS;

ALUMINUM NITRIDE;

EID: 73649122464 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3276567 Document Type: Article

Times cited : (63)

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