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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 5, 2011, Pages 1463-1466

Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy

(5) Bryant, Benjamin N a Kamber, Derrick S a Wu, Feng a Nakamura, Shuji a Speck, James S a

a Santa Barbara (United States)

Author keywords

AlN; HVPE; Microstructure; Patterned sapphire

Indexed keywords

ALGAN; ALN; ALN FILMS; C-PLANE SAPPHIRE SUBSTRATES; FULL WIDTHS AT HALF MAXIMUMS; GROWTH EVOLUTION; HEXAGONAL PATTERN; HVPE; HYDRIDE VAPOR PHASE EPITAXY; OFF-AXIS; PATTERNED SAPPHIRE; PATTERNING EFFECTS; THREADING DISLOCATION DENSITIES; UV OPTOELECTRONICS; UV REGION; X RAY ROCKING CURVE;

ALUMINUM; COALESCENCE; EPITAXIAL GROWTH; FLOCCULATION; MICROSTRUCTURE; NITRIDES; OPTICAL INSTRUMENTS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; VAPORS;

ALUMINUM NITRIDE;

EID: 79955619457 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201000908 Document Type: Article

Times cited : (3)

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