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Journal of Crystal Growth

Volumn 350, Issue 1, 2012, Pages 69-71

AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

(6) Nomura, Takuya a Okumura, Kenta a Miyake, Hideto a Hiramatsu, Kazumasa a Eryu, Osamu b Yamada, Yoichi c

a MIE UNIVERSITY (Japan)

b NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

c YAMAGUCHI UNIVERSITY (Japan)

Author keywords

A2. Homoepitaxial growth; A3. HVPE; B1. AlN

Indexed keywords

A3. HVPE; ALN; ALN LAYERS; ALN SUBSTRATES; CRACK FREE; HIGH-CRYSTALLINE QUALITY; HOMOEPITAXIAL GROWTH; IMPURITY CONCENTRATION; LOW IMPURITY CONCENTRATIONS; OFF-ANGLE; RAMAN SCATTERING SPECTROSCOPY; X-RAY ROCKING CURVE ANALYSIS;

CRACKS; EPITAXIAL GROWTH; PHASE TRANSITIONS; RESISTORS; SECONDARY ION MASS SPECTROMETRY;

SUBLIMATION;

EID: 84861586267 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.12.025 Document Type: Conference Paper

Times cited : (25)

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