Analysis of optical absorption in GaAs nanowire arrays

Nanoscale Research Letters

Volumn 6, Issue , 2011, Pages 1-6

  Guo, Haomin ^a   Wen, Long ^a   Li, Xinhua ^a   Zhao, Zhifei ^a   Wang, Yuqi ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

81.05.EA; ANTI-REFLECTION; COMBINED EFFECT; FILLING RATIO; FINITE DIFFERENCE TIME DOMAIN SIMULATIONS; GAAS; GEOMETRIC PARAMETER; II-IV SEMICONDUCTORS; NANOWIRE ARRAYS; OBLIQUE INCIDENCE; PHOTOCONDUCTION AND PHOTOVOLTAIC EFFECTS; RESONANT MODE;

FINITE DIFFERENCE TIME DOMAIN METHOD; GALLIUM ARSENIDE; GEOMETRY; LIGHT ABSORPTION; NANOWIRES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM;

TIME DOMAIN ANALYSIS;

EID: 84862913226     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-617     Document Type: Article

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