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Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

Enhancing the electron mobility via delta-doping in SrTiO3

(6) Kozuka, Y a,e Kim, M a Ohta, H b,c Hikita, Y a Bell, C a,c Hwang, H Y a,c,d

a UNIVERSITY OF TOKYO (Japan)

b NAGOYA UNIVERSITY (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

d STANFORD UNIVERSITY (United States)

e TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK VALUE; DELTA-DOPING; DOPED LAYERS; DOPED STRUCTURES; HALL MEASUREMENTS; HIGH MOBILITY; HIGH-FIELD; LATTICE MISFITS; LOW TEMPERATURE ELECTRONICS; MOBILITY ENHANCEMENT; SRTIO;

DOPING (ADDITIVES); ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; HALL MOBILITY; STRONTIUM ALLOYS; TRANSPORT PROPERTIES;

GALVANOMAGNETIC EFFECTS;

EID: 78650641399 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3524198 Document Type: Article

Times cited : (62)

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