Electronic structures and optical properties of Zn-doped β-Ga 2O3 with different doping sites

Chinese Physics B

Volumn 21, Issue 12, 2012, Pages

  Li, Chao ^a   Yan, Jin Liang ^a   Zhang, Li Ying ^a   Zhao, Gang ^a  

^a LUDONG UNIVERSITY   (China)

Author keywords

first principles; optical properties; p type semiconductor; Zn doped Ga2O3

Indexed keywords

DOPING SITES; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; NEAR INFRARED REGION; P TYPE SEMICONDUCTOR; ZN DOPING;

CALCULATIONS; ELECTRONIC STRUCTURE; GALLIUM; INFRARED DEVICES; OPTICAL PROPERTIES; REFLECTION; SEMICONDUCTOR DOPING;

ZINC;

EID: 84870921319     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/21/12/127104     Document Type: Article

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