Effects of N-doping concentration on the electronic structure and optical properties of N-doped β-Ga 2O 3

Chinese Physics B

Volumn 21, Issue 6, 2012, Pages

  Zhang, Li Ying ^a   Yan, Jin Liang ^a   Zhang, Yi Jun ^a   Li, Ting ^a  

^a LUDONG UNIVERSITY   (China)

Author keywords

electronic structure; first principles; N doped; optical properties; p type Ga 2O 3

Indexed keywords

CHARGE DENSITY DISTRIBUTIONS; COMPLEX REFRACTIVE INDEX; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; FIRST PRINCIPLES METHOD; FIRST-PRINCIPLES; FORMATION ENERGIES; IMPURITY ABSORPTION; IMPURITY LEVEL; N-DOPED; N-DOPING; P-TYPE; STABLE STRUCTURES;

ELECTRONIC STRUCTURE; OPTICAL PROPERTIES; REFRACTIVE INDEX;

GALLIUM;

EID: 84862532696     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/21/6/067102     Document Type: Article

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