Electron transport through dangling-bond silicon wires on H-passivated Si(100)

Journal of Physics Condensed Matter

Volumn 25, Issue 2, 2013, Pages

  Kepenekian, Mikaël ^a   Novaes, Frederico D ^a   Robles, Roberto ^a   Monturet, Serge ^b   Kawai, Hiroyo ^c   Joachim, Christian ^b,c   Lorente, Nicolás ^a  

^a CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

^b CEMES CNRS   (France)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

1D STRUCTURES; DANGLING-BOND WIRES; ELECTRON ENERGIES; ELECTRON TRANSMISSION; ELECTRON TRANSPORT; EXPERIMENTAL IDENTIFICATION; JAHN-TELLER INSTABILITY; MAGNETIC INSTABILITY; RECENT PROGRESS; SI(1 0 0); SI(100) SURFACE; SI-BASED; SILICON SURFACES; SILICON WIRES; TRANSPORT CAPABILITIES; TRANSPORT CHARACTERISTICS; TRANSPORT EXPERIMENTS;

ATOMS; DANGLING BONDS; DENSITY FUNCTIONAL THEORY; DESORPTION; ELECTRON TRANSPORT PROPERTIES; PASSIVATION; TRANSPORT PROPERTIES; WIRE;

SILICON;

HYDROGEN; NANOMATERIAL; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; ELECTRON TRANSPORT; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELECTRON TRANSPORT; HYDROGEN; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOSTRUCTURES; SILICON;

EID: 84870917739     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/25/2/025503     Document Type: Article

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