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Volumn 386, Issue 1-3, 1997, Pages 340-342

First-principles study of atomic wires on a H-terminated Si(100)-(2 × 1) surface

(4) Watanabe, S a,b Ono, Y A b Hashizume, T b Wada, Y b

Author keywords

Adatoms; Density functional calculations; Gallium; Hydrogen; Low index single crystal surfaces; Semiconducting surfaces; Silicon; Surface electronic phenomena

Indexed keywords

ADSORPTION; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; HYDROGEN; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; SURFACE PHENOMENA;

ADATOMS; ATOMIC WIRES; DENSITY FUNCTIONAL CALCULATIONS; FIRST PRINCIPLES CALCULATIONS; LOW INDEX SINGLE CRYSTAL;

SEMICONDUCTING SILICON;

EID: 0031249363 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00338-5 Document Type: Article

Times cited : (17)

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