Multiband quantum transmitting boundary method for non-orthogonal basis

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 507-513

  Liang, G C ^a   Lin, Y A ^a   Ting, D Z Y ^a,c   Chang, Y C ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b University of Illinois at Urbana Champaign   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Non orthogonal basis; Resonant tunneling; Tight binding; Transmission coefficient

Indexed keywords

FUNCTIONS; HETEROJUNCTIONS; INTEGRATED CIRCUIT LAYOUT; QUANTUM ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

DOUBLE BARRIER STRUCTURES; MULTIBAND QUANTUM TRANSMITTING BOUNDARY METHOD (MQTBM); PLANAR-BASIS PSEUDOPOTENTIAL METHOD; RESONANT TUNNELING; TRANSMISSION COEFFICIENT; WANNIER FUNCTION BASIS;

VLSI CIRCUITS;

EID: 0032307779     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/90280     Document Type: Article

References (7)

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3. Lent, C. S. and Kirkner., D. J. (1990). "The quantum transmitting boundary method", J. Appl. Phys., 67, 6353.
4. Ting, D. Z.-Y. and McGill, T. C. "Multiband and Multidimensional Analysis of Quantum Transport in Ultrasubmicron Device", published in Quantum Transport Ultrasmall in Device, edit by D. K. Ferry, H. L. Grubin, C. Jacoboni and A.-P. Jauho, NATO ASI Series, Series B : Physic; 342, (Plenum Press, New York, 1995), pp. 417-436.
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7. Chang, Y.-C. and Schulman, J. N. (1983). "Complex band structures of crystalline solids", Phys. Rev. B., 27, 2346.