Two-step annealing effects on ultrathin EOT higher-k (k 40) ALD-HfO 2 gate stacks

European Solid-State Device Research Conference

Volumn , Issue , 2012, Pages 81-84

  Morita, Yukinori ^a   Migita, Shinji ^a   Mizubayashi, Wataru ^a   Masahara, Meishoku ^a   Ota, Hiroyuki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC CRYSTAL; EQUIVALENT OXIDE THICKNESS; GATE STACKS; HIGH PERMITTIVITY; INTERFACIAL LAYER; POST DEPOSITION ANNEALING; TWO-STEP ANNEALING; ULTRA-THIN;

HAFNIUM OXIDES; LOGIC GATES; PERMITTIVITY;

ATOMIC LAYER DEPOSITION;

EID: 84870605554     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2012.6343338     Document Type: Conference Paper

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