Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 2012, Pages 334-337

  Theodorou, Christoforos G ^a,b   Ioannidis, Eleftherios G ^a,b   Haendler, Sebastien ^c   Planes, Nicolas ^c   Arnaud, Franck ^c   Jomaah, Jalal ^b   Dimitriadis, Charalabos A ^a   Ghibaudo, Gerard ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b IMEP LAHC   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE BIAS; BIASING VOLTAGES; BURIED OXIDES; COUPLING EFFECT; GATE COUPLING; LF NOISE; LOW-FREQUENCY NOISE; MOSFETS; NOISE LEVELS; NOISE SOURCE; OXIDE TRAP DENSITY; REMOTE COULOMB SCATTERINGS; ULTRATHIN SILICON;

MOS DEVICES;

EID: 84870594336     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2012.6343401     Document Type: Conference Paper

References (10)

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