New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1286-1290

  El Husseini, J ^a   Martinez, F ^a   Armand, J ^a   Bawedin, M ^a   Valenza, M ^a   Ritzenthaler, R ^b   Lime, F ^b   Iniguez B ^b   Faynot, O ^c   Le Royer, C ^c  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^c CEA LETI   (France)

Author keywords

Green's functions; Low frequency noise; SOI MOSFETs

Indexed keywords

BURIED OXIDES; EXPERIMENTAL DATA; FLAT-BAND VOLTAGE; INVERSION CHARGE; LOW-FREQUENCY NOISE; MOSFETS; NOISE BEHAVIOR; NUMERICAL MODELS; OXIDE TRAP DENSITY; SOI-MOSFETS; ULTRA-THIN-BODY;

COMPUTER SIMULATION; POWER SPECTRAL DENSITY; SPECTRAL DENSITY; THERMAL NOISE;

MOSFET DEVICES;

EID: 79958074032     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.095     Document Type: Conference Paper

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