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Volumn 8, Issue 1, 2008, Pages

Modeling and simulation of coupling effect on low frequency noise in advanced SOI mosfets

Author keywords

Double gate; Fully depleted; LF noise; MOSFET; SOI

Indexed keywords


EID: 44349173098     PISSN: 02194775     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219477508004325     Document Type: Article
Times cited : (10)

References (15)
  • 2
    • 0035395568 scopus 로고    scopus 로고
    • Comprehensive study on low-frequency noise characteristics in surface channel SOI CMOSFETs and device design optimization for RF ICs
    • July
    • Y.-C. Tseng, W. Margaret Huang and M. Mendicino et al., Comprehensive study on low-frequency noise characteristics in surface channel SOI CMOSFETs and device design optimization for RF ICs, IEEE Trans. Electron Devices 48(7) (July 2001).
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.7
    • Tseng, Y.-C.1    Margaret Huang, W.2    Mendicino, M.3
  • 3
    • 0024089624 scopus 로고
    • Determination of Si-SiO2 interface trap density by 1/f noise measurements
    • Z. Celik-Butler et al., Determination of Si-SiO2 interface trap density by 1/f noise measurements, IEEE TED 35(10) (1988) 1651-1655.
    • (1988) IEEE TED , vol.35 , Issue.10 , pp. 1651-1655
    • Celik-Butler, Z.1
  • 4
    • 0025560686 scopus 로고
    • Interface coupling effects in thin Silicon-On-Insulator
    • T. Ouisse, S.Cristoloveanu and T. Elewa et al., Interface coupling effects in thin Silicon-On-Insulator, Superlatt. Microstntct. 8 (1990) 111-116.
    • (1990) Superlatt. Microstntct , vol.8 , pp. 111-116
    • Ouisse, T.1    Cristoloveanu, S.2    Elewa, T.3
  • 5
    • 0026144142 scopus 로고
    • Improved analysis of low frequency noise in field-effect MOS transistors
    • G. Ghibaudo, O. Roux and Ch. Nguyen-Due et al., Improved analysis of low frequency noise in field-effect MOS transistors, Phys. Stat. sol. (a) 124 (1991) 571.
    • (1991) Phys. Stat. sol. (a) , vol.124 , pp. 571
    • Ghibaudo, G.1    Roux, O.2    Nguyen-Due, C.3
  • 6
    • 33847263529 scopus 로고    scopus 로고
    • Low frequency noise in multi-gate SOI CMOS devices
    • L. Zafari, J. Jomaah and G. Ghibaudo, Low frequency noise in multi-gate SOI CMOS devices, Solid State Electronics 51 (2007) 292-298.
    • (2007) Solid State Electronics , vol.51 , pp. 292-298
    • Zafari, L.1    Jomaah, J.2    Ghibaudo, G.3
  • 7
    • 0020830319 scopus 로고
    • Threshold voltage of thin film Silicon-On-Insulator (SOI) MOSFETse
    • H. Lim and J. Fossum, Threshold voltage of thin film Silicon-On-Insulator (SOI) MOSFETse, IEEE Transactions Electron Devices (1983) 1244-1251.
    • (1983) IEEE Transactions Electron Devices , pp. 1244-1251
    • Lim, H.1    Fossum, J.2
  • 9
    • 0016508265 scopus 로고
    • Theory of the carrier-density fluctuations in an IGFET near threshold
    • J. R. Brews, Theory of the carrier-density fluctuations in an IGFET near threshold, Journal of Applied Physics 46 (1975) 2181 -2192.
    • (1975) Journal of Applied Physics , vol.46 , pp. 2181-2192
    • Brews, J.R.1
  • 10
    • 13644267935 scopus 로고    scopus 로고
    • Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel nMOSFETs
    • A. K. M. Ahsan and D. K. Schroder, Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel nMOSFETs, Solid-State Electronics 49 (2005) 654-662.
    • (2005) Solid-State Electronics , vol.49 , pp. 654-662
    • Ahsan, A.K.M.1    Schroder, D.K.2
  • 11
    • 0028409304 scopus 로고
    • Experimental investigation and numerical simulation of low-frequency noise in thin film SOI MOSFETs
    • J. Jomaah, F. Balestra and G. Ghibaudo, Experimental investigation and numerical simulation of low-frequency noise in thin film SOI MOSFETs, Phys. Stat. Sol (a) 142 (1994) 533-537.
    • (1994) Phys. Stat. Sol (a) , vol.142 , pp. 533-537
    • Jomaah, J.1    Balestra, F.2    Ghibaudo, G.3
  • 12
    • 0019048875 scopus 로고
    • Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
    • S. C. Sun and J. D. Plummer, Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces, IEEE Transactions on Electron Devices 27 (1980) 1497-1508.
    • (1980) IEEE Transactions on Electron Devices , vol.27 , pp. 1497-1508
    • Sun, S.C.1    Plummer, J.D.2
  • 13
    • 0028749409 scopus 로고
    • A comprehensive study of MOSFET electron mobility in both weak and strong inversion regimes
    • J. Koga, S. Takagi and A. Toriumi, A comprehensive study of MOSFET electron mobility in both weak and strong inversion regimes, IEDM Tech. Digest. (1994) 475-178.
    • (1994) IEDM Tech. Digest , pp. 475-178
    • Koga, J.1    Takagi, S.2    Toriumi, A.3
  • 14
    • 2942661718 scopus 로고    scopus 로고
    • Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs
    • E. Simoen, A. Mercha and C. Claeys et al., Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs, IEEE Transactions on Electron Devices 51 (2004) 1008-1016.
    • (2004) IEEE Transactions on Electron Devices , vol.51 , pp. 1008-1016
    • Simoen, E.1    Mercha, A.2    Claeys, C.3
  • 15
    • 36248997062 scopus 로고    scopus 로고
    • Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique
    • W. Chaisantikulwat, M. Mouis, G. Ghibaudo, S. Cristoloveanu, J. Widiez, M. Vinet and S. Deleonibus, Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique, Solid State Electronics 51 (2007) 1494-1499.
    • (2007) Solid State Electronics , vol.51 , pp. 1494-1499
    • Chaisantikulwat, W.1    Mouis, M.2    Ghibaudo, G.3    Cristoloveanu, S.4    Widiez, J.5    Vinet, M.6    Deleonibus, S.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.