Suppression of 1/f noise in accumulation mode FD-SOI MOSFETs on Si(lOO) and (110) surfaces

AIP Conference Proceedings

Volumn 1129, Issue , 2009, Pages 337-340

  Cheng, W ^a   Tye, C ^a   Gaubert, P ^a   Teramoto, A ^a   Sugawa, S ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

1 f noise; Accumulation mode; Silicon orientation; SOI

Indexed keywords

EID: 67650457047     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3140467     Document Type: Conference Paper

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