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Volumn 51, Issue 2, 2007, Pages 292-298

Low frequency noise in multi-gate SOI CMOS devices

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

EID: 33847263529     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.005     Document Type: Article
Times cited : (28)

References (15)
  • 2
    • 0035395568 scopus 로고    scopus 로고
    • Comprehensive study on low-frequency noise characteristics in surface channel SOI MOSFETs and Device Design Optimization for RF ICs
    • Tseng Y.-C., Margaret Huang W., Mendicino M., Monk D.J., Welch P.J., and Woo J.C.S. Comprehensive study on low-frequency noise characteristics in surface channel SOI MOSFETs and Device Design Optimization for RF ICs. IEEE Trans Electron Dev 48 7 (2001)
    • (2001) IEEE Trans Electron Dev , vol.48 , Issue.7
    • Tseng, Y.-C.1    Margaret Huang, W.2    Mendicino, M.3    Monk, D.J.4    Welch, P.J.5    Woo, J.C.S.6
  • 3
    • 0024089624 scopus 로고
    • 2 interface trap density by 1/f noise measurements
    • 2 interface trap density by 1/f noise measurements. IEEE TED 35 10 (1988) 1651-1655
    • (1988) IEEE TED , vol.35 , Issue.10 , pp. 1651-1655
    • Celik-Butler, Z.1
  • 4
    • 33847303384 scopus 로고    scopus 로고
    • Chroboczek JA, Piantino G. Patent No. 15075, France. Registered in November 1999.
  • 8
    • 0020830319 scopus 로고
    • Threshold voltage of thin film silicon-on-insulator (SOI) MOSFETs
    • Lim H., and Fossum J. Threshold voltage of thin film silicon-on-insulator (SOI) MOSFETs. IEEE Trans Electron Dev (1983) 1244-1251
    • (1983) IEEE Trans Electron Dev , pp. 1244-1251
    • Lim, H.1    Fossum, J.2
  • 11
    • 0016508265 scopus 로고
    • Theory of the carrier-density fluctuations in an IGFET Near Threshold
    • Brews J.R. Theory of the carrier-density fluctuations in an IGFET Near Threshold. J Appl Phys 46 (1975) 2181-2192
    • (1975) J Appl Phys , vol.46 , pp. 2181-2192
    • Brews, J.R.1
  • 12
    • 13644267935 scopus 로고    scopus 로고
    • Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel nMOSFETs
    • Ahsan A.K.M., and Schroder D.K. Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel nMOSFETs. Solid-State Electron 49 (2005) 654-662
    • (2005) Solid-State Electron , vol.49 , pp. 654-662
    • Ahsan, A.K.M.1    Schroder, D.K.2
  • 13
    • 0028409304 scopus 로고
    • Experimental investigation and numerical simulation of low-frequency noise in thin film SOI MOSFETs
    • Jommah J., Balestra F., and Ghibaudo G. Experimental investigation and numerical simulation of low-frequency noise in thin film SOI MOSFETs. Phys Status Solidi A 142 (1994) 533-537
    • (1994) Phys Status Solidi A , vol.142 , pp. 533-537
    • Jommah, J.1    Balestra, F.2    Ghibaudo, G.3
  • 14
    • 0027697881 scopus 로고
    • A low frequency noise study of gate-all-around SOI transistors
    • Simoen E., Magnusson U., and Claeys C. A low frequency noise study of gate-all-around SOI transistors. IEEE Trans Electron Dev 40 November (1993) 2057-2059
    • (1993) IEEE Trans Electron Dev , vol.40 , Issue.November , pp. 2057-2059
    • Simoen, E.1    Magnusson, U.2    Claeys, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.