SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 8, 2011, Pages

Modulation doping of graphene: An approach toward manufacturable devices

(2) Gu, Gong a Xie, Zhijian b

a University of Tennessee (United States)

b North Carolina Agricultural and Technical State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BANDGAP MATERIALS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTRONIC MATERIALS; MICROELECTRONICS INDUSTRY; MODULATION DOPING; NUMERICAL CALCULATION;

ENERGY GAP; GRAPHENE; MICROELECTRONICS;

SEMICONDUCTOR DOPING;

EID: 79952091341 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3556587 Document Type: Article

Times cited : (6)

References (21)

1
- 33847690144
- The rise of graphene
- DOI 10.1038/nmat1849, PII NMAT1849
- A. K. Geim and K. S. Novoselov, Nature Mater. 1476-1122 6, 183 (2007). 10.1038/nmat1849 (Pubitemid 46353764)
- (2007) Nature Materials , vol.6 , Issue.3 , pp. 183-191
- Geim, A.K.¹ Novoselov, K.S.²

2
- 79952088653
- International Technology Roadmafor Semiconductors (ITRS), edition, Emerging Research Devices
- International Technology Roadmap for Semiconductors (ITRS), 2009 edition, Emerging Research Devices, http://www.itrs.net/Links/2009ITRS/2009Chapters- 2009Tables/2009-ERD.pdf.
- (2009)

3
- 38749096585
- Molecular doping of graphene
- DOI 10.1021/nl072364w
- T. O. Wehling, K. S. Novoselov, S. V. Morozov, E. E. Vdovin, M. I. Katsnelson, A. K. Geim, and A. I. Lichtenstein, Nano Lett. 1530-6984 8, 173 (2008). 10.1021/nl072364w (Pubitemid 351177796)
- (2008) Nano Letters , vol.8 , Issue.1 , pp. 173-177
- Wehling, T.O.¹ Novoselov, K.S.² Morozov, S.V.³ Vdovin, E.E.⁴ Katsnelson, M.I.⁵ Geim, A.K.⁶ Lichtenstein, A.I.⁷

4
- 77956337082
- 0556-2805, 10.1103/PhysRevB.81.235401
- C. Coletti, C. Riedl, D. S. Lee, B. Krauss, L. Patthey, K. von Klitzing, J. H. Smet, and U. Starke, Phys. Rev. B 0556-2805 81, 235401 (2010). 10.1103/PhysRevB.81.235401
- (2010) Phys. Rev. B , vol.81 , pp. 235401
- Coletti, C.¹ Riedl, C.² Lee, D.S.³ Krauss, B.⁴ Patthey, L.⁵ Von Klitzing, K.⁶ Smet, J.H.⁷ Starke, U.⁸

5
- 69049092552
- 0079-6816, 10.1016/j.progsurf.2009.06.002
- W. Chen, D. Qi, X. Gao, and A. T. S. Wee, Prog. Surf. Sci. 0079-6816 84, 279 (2009). 10.1016/j.progsurf.2009.06.002
- (2009) Prog. Surf. Sci. , vol.84 , pp. 279
- Chen, W.¹ Qi, D.² Gao, X.³ Wee, A.T.S.⁴

6
- 44949246736
- (Springer, Dordrecht, The Netherland), p
- U. K. Mishra and J. Singh, Semiconductor Device Physics and Design (Springer, Dordrecht, The Netherland, 2007), pp 375-388.
- (2007) Semiconductor Device Physics and Design , pp. 375-388
- Mishra, U.K.¹ Singh, J.²

7
- 0003805738
- 2nd ed. (Wiley, New York)
- R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. (Wiley, New York, 1977), p. 380.
- (1977) Device Electronics for Integrated Circuits , pp. 380
- Muller, R.S.¹ Kamins, T.I.²

8
- 0001972254
- 0953-8984, 10.1088/0953-8984/9/1/004
- C. Oshima and A. Nagashima, J. Phys.: Condens. Matter 0953-8984 9, 1 (1997). 10.1088/0953-8984/9/1/004
- (1997) J. Phys.: Condens. Matter , vol.9 , pp. 1
- Oshima, C.¹ Nagashima, A.²

9
- 0003903935
- (McGraw-Hill, New York)
- J. Singh, Physics of Semiconductors and Their Heterostructures (McGraw-Hill, New York, 1993), p. 193.
- (1993) Physics of Semiconductors and Their Heterostructures , pp. 193
- Singh, J.¹

10
- 0000781318
- 0556-2805, 10.1103/PhysRevB.54.17954
- K. Nakada, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rev. B 0556-2805 54, 17954 (1996). 10.1103/PhysRevB.54.17954
- (1996) Phys. Rev. B , vol.54 , pp. 17954
- Nakada, K.¹ Fujita, M.² Dresselhaus, G.³ Dresselhaus, M.S.⁴

11
- 35948971778
- Quasiparticle energies and band gaps in graphene nanoribbons
- DOI 10.1103/PhysRevLett.99.186801
- L. Yang, C. -H. Park, Y. -W. Son, M. L. Cohen, and S. G. Louie, Phys. Rev. Lett. 0031-9007 99, 186801 (2007). 10.1103/PhysRevLett.99.186801 (Pubitemid 350074449)
- (2007) Physical Review Letters , vol.99 , Issue.18 , pp. 186801
- Yang, L.¹ Park, C.-H.² Son, Y.-W.³ Cohen, M.L.⁴ Louie, S.G.⁵

12
- 34547588638
- Gate electrostatics and quantum capacitance of graphene nanoribbons
- DOI 10.1021/nl0706190
- J. Guo, Y. Yoon, and Y. Ouyang, Nano Lett. 1530-6984 7, 1935 (2007). 10.1021/nl0706190 (Pubitemid 47197570)
- (2007) Nano Letters , vol.7 , Issue.7 , pp. 1935-1940
- Guo, J.¹ Yoon, Y.² Ouyang, Y.³

13
- 34547334459
- Energy band-gap engineering of graphene nanoribbons
- DOI 10.1103/PhysRevLett.98.206805
- M. Y. Han, B. Özyilmaz, Y. Zhang, and P. Kim, Phys. Rev. Lett. 0031-9007 98, 206805 (2007). 10.1103/PhysRevLett.98.206805 (Pubitemid 47139572)
- (2007) Physical Review Letters , vol.98 , Issue.20 , pp. 206805
- Han, M.Y.¹ Ozyilmaz, B.² Zhang, Y.³ Kim, P.⁴

14
- 36048991480
- Graphene nano-ribbon electronics
- DOI 10.1016/j.physe.2007.06.020, PII S1386947707001427
- Z. Chen, Y. -M. Lin, M. J. Rooks, and P. Avouris, Physica E (Amsterdam) 1386-9477 40, 228 (2007). 10.1016/j.physe.2007.06.020 (Pubitemid 350102338)
- (2007) Physica E: Low-Dimensional Systems and Nanostructures , vol.40 , Issue.2 , pp. 228-232
- Chen, Z.¹ Lin, Y.-M.² Rooks, M.J.³ Avouris, P.⁴

15
- 21244484984
- Single-walled carbon nanotube electronics
- DOI 10.1109/TNANO.2002.1005429
- We use a simple picture of wave vector quantization similar to that for carbon nanotubes illustrated in P. L. McEuen, M. S. Fuhrer, and H. Park, IEEE Trans. Nanotechnol. 1536-125X 1, 78 (2002). 10.1109/TNANO.2002.1005429 (Pubitemid 43987438)
- (2002) IEEE Transactions on Nanotechnology , vol.1 , Issue.1 , pp. 78-84
- McEuen, P.L.¹ Fuhrer, M.S.² Park, H.³

16
- 79952098566
- See supplementary material at E-APPLAB-98-024108 for details of band gaand carrier density determination and for more results and discussions
- See supplementary material at http://dx.doi.org/10.1063/1.3556587 E-APPLAB-98-024108 for details of band gap and carrier density determination and for more results and discussions.

17
- 65849215626
- 0038-1098, 10.1016/j.ssc.2009.02.042
- J. -H. Chen, C. Jang, M. Ishigami, S. Xiao, W. G. Cullen, E. D. Williams, and M. S. Fuhrer, Solid State Commun. 0038-1098 149, 1080 (2009). 10.1016/j.ssc.2009.02.042
- (2009) Solid State Commun. , vol.149 , pp. 1080
- Chen, J.-H.¹ Jang, C.² Ishigami, M.³ Xiao, S.⁴ Cullen, W.G.⁵ Williams, E.D.⁶ Fuhrer, M.S.⁷

18
- 70350680476
- The only evidence of GNR pn junction rectification to our knowledge is in, 0556-2805, ; where current through the npn or pnconfigurations is due to tunneling 10.1103/PhysRevB.80.121407
- The only evidence of GNR pn junction rectification to our knowledge is in X. Liu, J. B. Oostinga, A. F. Morpurgo, and L. M. K. Vandersypen, Phys. Rev. B 0556-2805 80, 121407 (2009); where current through the npn or pnp configurations is due to tunneling 10.1103/PhysRevB.80.121407
- (2009) Phys. Rev. B , vol.80 , pp. 121407
- Liu, X.¹ Oostinga, J.B.² Morpurgo, A.F.³ Vandersypen, L.M.K.⁴

19
- 3242718826
- indeed, rectification by similar carbon nanotube pn junctions was unambiguously shown by, 0003-6951, (GNR pn junctions with comparable band gaps are expected to exhibit similar rectifying behavior). 10.1063/1.1769595
- indeed, rectification by similar carbon nanotube pn junctions was unambiguously shown by J. U. Lee, P. P. Gipp, and C. M. Heller, Appl. Phys. Lett. 0003-6951 85, 145 (2004) (GNR pn junctions with comparable band gaps are expected to exhibit similar rectifying behavior). 10.1063/1.1769595
- (2004) Appl. Phys. Lett. , vol.85 , pp. 145
- Lee, J.U.¹ Gipp, P.P.² Heller, C.M.³

20
- 77955746511
- 0003-6951, 10.1063/1.3467454
- B. Lee, G. Mordi, M. J. Kim, Y. J. Chabal, E. M. Vogel, R. M. Wallace, K. J. Cho, L. Colombo, and J. Kim, Appl. Phys. Lett. 0003-6951 97, 043107 (2010). 10.1063/1.3467454
- (2010) Appl. Phys. Lett. , vol.97 , pp. 043107
- Lee, B.¹ Mordi, G.² Kim, M.J.³ Chabal, Y.J.⁴ Vogel, E.M.⁵ Wallace, R.M.⁶ Cho, K.J.⁷ Colombo, L.⁸ Kim, J.⁹

21
- 0029408490
- 0018-9383, 10.1109/16.469391
- D. M. Shah, W. K. Chan, C. Caneau, T. J. Gmitter, J. -I. Song, B. P. Hong, P. F. Micelli, and F. DeRosa, IEEE Trans. Electron Devices 0018-9383 42, 1877 (1995). 10.1109/16.469391
- (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1877
- Shah, D.M.¹ Chan, W.K.² Caneau, C.³ Gmitter, T.J.⁴ Song, J.-I.⁵ Hong, B.P.⁶ Micelli, P.F.⁷ Derosa, F.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.