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Applied Physics Letters

Volumn 101, Issue 22, 2012, Pages

Crystal structure and epitaxy of Bi2Te3 films grown on Si

(8) Park, Jihwey a Soh, Yeong Ah a Aeppli, G a Bland, S R b Zhu, Xie Gang c Chen, Xi c Xue, Qi Kun c Grey, Francois c

a UNIVERSITY COLLEGE LONDON (United Kingdom)

b DURHAM UNIVERSITY (United Kingdom)

c TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE INTERFACES; CRYSTALLINE PHASIS; EPITAXIAL RELATIONSHIPS; EPITAXY OF THIN FILMS; HIGH-CRYSTALLINE QUALITY; SI (1 1 1); SI SUBSTRATES; STRUCTURAL MODIFICATIONS; SUPER CELL; TOPOLOGICAL INSULATORS; X-RAY DIFFRACTION STUDIES;

CRYSTALLINE MATERIALS; EPITAXIAL FILMS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SUBSTRATES; X RAY DIFFRACTION;

SILICON;

EID: 84870509513 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4768259 Document Type: Article

Times cited : (25)

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