Current-confinement structure and extremely high current density in organic light-emitting transistors

Advanced Materials

Volumn 24, Issue 46, 2012, Pages 6141-6146

  Sawabe, Kosuke ^a   Imakawa, Masaki ^b   Nakano, Masaki ^c   Yamao, Takeshi ^d   Hotta, Shu ^d   Iwasa, Yoshihiro ^c,e   Takenobu, Taishi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c RIKEN   (Japan)

^d KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

ambipolar transistors; light emitting transistors; organic transistors; single crystal transistors

Indexed keywords

AMBIPOLAR; AMBIPOLAR TRANSISTORS; HIGH CURRENT DENSITIES; LASER ETCHING; LIGHT-EMITTING TRANSISTORS; ORGANIC LIGHT EMITTING DIODES(OLEDS); ORGANIC LIGHT-EMITTING; ORGANIC TRANSISTOR; SINGLE-CRYSTAL TRANSISTORS; THREE ORDERS OF MAGNITUDE;

CRYSTAL STRUCTURE; CURRENT DENSITY; LIGHT EMITTING DIODES; TRANSISTORS;

SINGLE ELECTRON TRANSISTORS;

2 TERTHIENYL; ALPHA-TERTHIENYL; ORGANIC COMPOUND; POLY(METHYL METHACRYLATE); SILICON DIOXIDE; THIOPHENE DERIVATIVE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; LUMINESCENCE; SEMICONDUCTOR;

CRYSTALLIZATION; LUMINESCENCE; ORGANIC CHEMICALS; POLYMETHYL METHACRYLATE; SILICON DIOXIDE; THIOPHENES; TRANSISTORS, ELECTRONIC;

EID: 84870499147     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201202252     Document Type: Article

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