Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistors

Advanced Materials

Volumn 23, Issue 20, 2011, Pages 2353-2356

  Namdas, Ebinazar B ^a   Hsu, Ben B Y ^a   Yuen, Jonathan D ^a   Samuel, Ifor D W ^b   Heeger, Alan J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF ST ANDREWS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC STACK; EMISSION EFFICIENCIES; HIGH BRIGHTNESS; HIGH EFFICIENCY; LIGHT-EMITTING TRANSISTORS; OPERATING VOLTAGE; SPECTRUM RANGE;

DIELECTRIC MATERIALS; GATES (TRANSISTOR); LIGHT EMISSION; LUMINANCE; SILICON NITRIDE;

GATE DIELECTRICS;

POLYMER; SILICON DERIVATIVE; SILICON DIOXIDE; SILICON NITRIDE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR;

POLYMERS; SILICON COMPOUNDS; SILICON DIOXIDE; TRANSISTORS, ELECTRONIC;

EID: 79958780977     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201004102     Document Type: Article

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