Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors

Applied Physics Letters

Volumn 99, Issue 23, 2011, Pages

  Imakawa, Masaki ^a   Sawabe, Kosuke ^b   Yomogida, Yohei ^b   Iwasa, Yoshihiro ^c,d   Takenobu, Taishi ^a,d  

^a WASEDA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRAPS; OUTPUT CHARACTERISTICS; OUTPUT CURVE; PINCHOFF; RUBRENES; SATURATION REGION; SINGLE-CRYSTAL TRANSISTORS; TRANSMISSION-LINE;

CARRIER MOBILITY;

CONTACT RESISTANCE;

EID: 83455164031     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3666236     Document Type: Article

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