SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 10, 2009, Pages

Tuning of threshold voltage by interfacial carrier doping in organic single crystal ambipolar light-emitting transistors and their bright electroluminescence

(4) Nakanotani, Hajime a Saito, Masatoshi b Nakamura, Hiroaki b Adachi, Chihaya a

a KYUSHU UNIVERSITY (Japan)

b IDEMITSU KOSAN CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; CARRIER DOPING; CARRIER RECOMBINATION; ELECTRON TRANSFER; ELECTRONS AND HOLES; EXCITON DENSITY; HIGH CURRENT DENSITIES; HIGH MOBILITY; HOLE ACCUMULATION; HOLE-DOPING; LIGHT-EMITTING TRANSISTORS; MOLYBDENUM OXIDES; ORGANIC LIGHT-EMITTING FIELD-EFFECT TRANSISTORS; ORGANIC SINGLE CRYSTALS; SMALL CHARGES;

BENZENE; ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; MOLYBDENUM; MOLYBDENUM COMPOUNDS; SINGLE CRYSTALS; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 70249093604 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3216047 Document Type: Article

Times cited : (60)

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