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Volumn 4, Issue 11, 2012, Pages 5761-5765

Interface engineered BaTiO3/SrTiO3 heterostructures with optimized high-frequency dielectric properties

Author keywords

BaTiO3 SrTiO3; epitaxial behavior; ferroelectric thin films; heretostrctures; microwave dielectric properties

Indexed keywords

AS-GROWN; BATIO; BEST VALUE; DIELECTRIC LOSS TANGENT; DIELECTRIC MEASUREMENTS; DIELECTRIC PERFORMANCE; EPITAXIAL BEHAVIOR; EPITAXIALLY GROWN; HERETOSTRCTURES; HIGH FREQUENCY HF; HIGH-FREQUENCY DIELECTRICS; INTERFACE EFFECT; LAYER THICKNESS; LOSS TANGENT; MGO; MGO SUBSTRATE; MICRO-STRUCTURAL CHARACTERIZATION; MICROWAVE DIELECTRIC PROPERTIES; MULTI-LAYERED STRUCTURE; PERIODIC NUMBER; ROOM TEMPERATURE; SHARP INTERFACE; TUNABLE MICROWAVE;

EID: 84870489555     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am301066u     Document Type: Article
Times cited : (58)

References (38)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.