Microwave dielectric properties with optimized Mn-doped Ba 0.6Sr0.4TiO3 highly epitaxial thin films

Crystal Growth and Design

Volumn 10, Issue 10, 2010, Pages 4221-4223

  Liu, Ming ^a,b   Ma, Chunrui ^a   Collins, Greg ^a   Liu, Jian ^a   Chen, Chonglin ^a   Shui, Li ^c   Wang, Hong ^c   Dai, Chao ^d   Lin, Yuan ^d   He, Jie ^e   Jiang, Jiechao ^e   Meletis, Efstathios I ^e   Zhang, Qingyu ^b  

^a UNIVERSITY OF TEXAS AT SAN ANTONIO   (United States)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^c XI'AN JIAOTONG UNIVERSITY   (China)

^d UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^e University of Texas at Arlington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN THIN FILMS; ATOMICALLY SHARP INTERFACE; BST FILM; EPITAXIAL THIN FILMS; EPITAXIALLY GROWN; MICRO-STRUCTURAL CHARACTERIZATION; MICROWAVE DIELECTRIC PROPERTIES; MN-DOPED; MN-DOPING; SINGLE CRYSTALLINE QUALITY; TIO;

BARIUM; DIELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; MANGANESE; PULSED LASER DEPOSITION; VAPOR DEPOSITION;

SEMICONDUCTOR DOPING;

EID: 77957705862     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg1006132     Document Type: Conference Paper

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