Low-voltage junctionless oxide-based thin-film transistors self-assembled by a gradient shadow mask

IEEE Electron Device Letters

Volumn 33, Issue 12, 2012, Pages 1720-1722

  Wu, Guodong ^a   Zhou, Jumei ^a   Zhang, Hongliang ^a   Zhu, Liqiang ^a   Wan, Qing ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

Gradient mask diffraction; junctionless thin film transistors (TFTs); operation mode modulation

Indexed keywords

CHANNEL THICKNESS; CRITICAL THICKNESS; DIFFRACTION METHODS; FIELD-EFFECT MOBILITIES; GLASS SUBSTRATES; GRADIENT MASKS; INDIUM TIN OXIDE; INDIUM ZINC OXIDES; JUNCTIONLESS; JUNCTIONLESS THIN FILM TRANSISTOR (TFTS); LOW-VOLTAGE; OPERATION MODE; RADIO-FREQUENCY-MAGNETRON SPUTTERING; SELF-ASSEMBLED; SHADOW MASK; THIN-FILM TRANSISTOR (TFTS);

DIFFRACTION; INDIUM; SUBSTRATES; TIN;

THIN FILM TRANSISTORS;

EID: 84870457240     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2217934     Document Type: Article

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