Threshold voltage control by gate electrode in Ga-Sn-Zn-O thin-film transistors for logic inverter application

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 5-6, 2011, Pages 211-213

  Lee, Hee Sung ^a   Park, Chan Ho ^a   Lee, Kwang H ^a   Kim, Dong Ho ^b   Kim, Hye Ri ^b   Lee, Gun Hwan ^b   Im, Seongil ^a  

^a Yonsei University   (South Korea)

^b Korea Institute of Material Science   (South Korea)

Author keywords

Amorphous oxides; GTZO; Inverters; TFT; Thin film transistors; Work function

Indexed keywords

AMORPHOUS OXIDES; GA-DOPED ZNO; GATE ELECTRODES; GTZO; HIGH VOLTAGE GAIN; INVERTER APPLICATION; INVERTERS; OXYGEN PRESSURE; TFT; TOP-GATE;

AMORPHOUS FILMS; ELECTRODES; GAIN MEASUREMENT; GALLIUM; OXYGEN; REFRACTORY METAL COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; VOLTAGE REGULATORS; WORK FUNCTION; ZINC; ZINC OXIDE;

TIN;

EID: 79957696067     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105158     Document Type: Article

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