Controlling the diameter of silicon nanowires grown using a tin catalyst

Materials Science in Semiconductor Processing

Volumn 16, Issue 1, 2013, Pages 15-22

  Al Taay, H F ^a,b   Mahdi, M A ^c   Parlevliet, D ^a   Jennings, P ^a  

^a MURDOCH UNIVERSITY   (Australia)

^b UNIVERSITY OF BAGHDAD   (Iraq)

^c SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Silicon nanowires; Tin catalyst; Wire diameter control

Indexed keywords

ELECTRON MICROSCOPY IMAGES; GLASS SUBSTRATES; PULSED PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NANOWIRES; THERMAL EVAPORATION METHOD; THIN FILM CATALYSTS; TIN CATALYST; WIRE DIAMETER;

CATALYSTS; ELECTRON MICROSCOPY; NANOWIRES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES; THERMAL EVAPORATION; THIN FILMS; TIN; WIRE;

FILM THICKNESS;

EID: 84870419076     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.07.006     Document Type: Article

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