Channel length variation effect on performance parameters of organic field effect transistors

Microelectronics Journal

Volumn 43, Issue 12, 2012, Pages 985-994

  Mittal, Poornima ^a,c   Kumar, B ^a   Negi, Y S ^b   Kaushik, B K ^b   Singh, R K ^c  

^a GRAPHIC ERA UNIVERSITY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

^c UTTARAKHAND TECHNICAL UNIVERSITY   (India)

Author keywords

Channel length; Contact resistance; Low mobility region; Organic field effect transistor; Threshold voltage; Top bottom contact structure

Indexed keywords

BOTTOM CONTACTS; CHANNEL LENGTH; CONTACT STRUCTURE; FIELD-DEPENDENT MOBILITY; FINITE ELEMENT; GATE VOLTAGES; LINEAR DEPENDENCY; LOW MOBILITY; MOBILITY REGION; PERFORMANCE PARAMETERS; RESEARCH PAPERS; SATURATION MOBILITY; SIMULATED STRUCTURE; TOP-CONTACT DEVICES; TRAP DENSITY; TWO DIMENSIONAL DEVICE SIMULATION;

CONTACT RESISTANCE; ORGANIC FIELD EFFECT TRANSISTORS; THRESHOLD VOLTAGE;

COMPUTER SIMULATION;

EID: 84870350515     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2012.07.016     Document Type: Article

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