Origin of characteristics differences between top and bottom contact organic thin film transistors

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Ishikawa, Yoshinori ^a   Wada, Yasuo ^a   Toyabe, Toru ^a  

^a TOYO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM CONTACTS; BOTTOM-CONTACT ORGANIC THIN-FILM TRANSISTOR; CHANNEL INTERFACE; CONTACT AREAS; CONTACT CHARACTERISTICS; CURRENT CONTINUITY; DRAIN VOLTAGE; HIGH POTENTIAL; INTRINSIC CHARACTERISTICS; POISSON'S EQUATION; POTENTIAL DISTRIBUTIONS; POTENTIAL DROP; SEMICONDUCTOR QUALITY; TOP-CONTACT DEVICES;

DRAIN CURRENT; HOLE CONCENTRATION; POISSON DISTRIBUTION; POISSON EQUATION; SEMICONDUCTOR DEVICES; THIN FILMS;

THIN FILM TRANSISTORS;

EID: 77949663425     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309935     Document Type: Article

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