Self-limited ionization in bandgap renormalized GaAs at high femtosecond laser intensities

Optical Engineering

Volumn 51, Issue 12, 2012, Pages

  Apostolova, Tzveta ^a   Ionin, Andrey A ^b   Kudryashov, Sergey I ^b   Seleznev, Leonid V ^b   Sinitsyn, Dimitri V ^b  

^a INSTITUTE FOR NUCLEAR RESEARCH AND NUCLEAR ENERGY   (Bulgaria)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

Auger recombination; Bandgap dynamics in GaAs; Electronically excited semiconductors; Photo induced electron hole plasma; Single photon and impact ionization mechanisms

Indexed keywords

AUGER RECOMBINATION; ELECTRON HOLE PLASMA; GAAS; IONIZATION DYNAMICS; IONIZATION MECHANISMS; THEORETICAL MODELING; TIME-RESOLVED REFLECTIVITIES; TRANSIENT ELECTRONICS;

AUGERS; BOLTZMANN EQUATION; DYNAMICS; FEEDBACK; GALLIUM ARSENIDE; IMPACT IONIZATION; PARTICLE BEAMS; PLASMA DENSITY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR LASERS; SHRINKAGE; ULTRASHORT PULSES;

ENERGY GAP;

EID: 84870340498     PISSN: 00913286     EISSN: 15602303     Source Type: Journal    
DOI: 10.1117/1.OE.51.12.121808     Document Type: Article

References (95)

1. C. V. Shank, R. Yen, and C. Hirlimann, "Femtosecond-time-resolved surface structural dynamics of optically excited silicon," Phys. Rev. Lett. 51(10), 900-902 (1983).
2. P. C. Becker et al., "Femtosecond photon echoes from band-to-band transitions in GaAs," Phys. Rev. Lett. 61(14), 1647-1649 (1988).
3. T. Elsaesser and J. Shah, "Initial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopy," Phys. Rev. Lett. 66(13), 1757-1760 (1991).
4. A. V. Kimel et al., "Room-temperature ultrafast carrier and spin dynamics in GaAs probed by the photoinduced magneto-optical Kerr effect," Phys. Rev. B 63(23), 235201 (2001).
5. R. Huber et al., "How many-particle interactions develop after ultrafast excitation of an electron-hole plasma," Nature 414(6861), 286-289 (2001). (Pubitemid 33097800)
6. F. Rossi and T. Kuhn, "Theory of ultrafast phenomena in photoexcited semiconductors," Rev. Mod. Phys. 74(3), 895-950 (2002).
7. A. J. Sabbah and D. M. Riffe, "Femtosecond pump-probe reflectivity study of silicon carrier dynamics," Phys. Rev. B 66(16), 165217 (2002).
8. A. Schwanhäußer et al., "Direct observation of quasiballistic ultrafast transport of electrons in GaAs: motion and side valley transfer," Phys. Rev. B 70(8), 085211 (2004).
9. A. D. Bristow, N. Rotenberg, and H. M. van Driel, "Two-photon absorption and Kerr coefficients of silicon for 850-2200 nm," Appl. Phys. Lett. 90(19), 191104 (2007).
10. T. Ichibayashi and K. Tanimura, "Ultrafast carrier relaxation in Si studied by time-resolved two-photon photoemission spectroscopy: intravalley scattering and energy relaxation of hot electrons," Phys. Rev. Lett. 102(8), 087403 (2009).
11. D. Hulin et al., "Energy transfer during silicon irradiation by femtosecond laser pulse," Phys. Rev. Lett. 52(22), 1998-2001 (1984).
12. K. Sokolowski-Tinten et al., "Two distinct transitions in ultrafast solidliquid phase transformations of GaAs," Appl. Phys. A 53(3), 227-234 (1991).
13. Y. Siegal, E. N. Glezer, and E. Mazur, "Dielectric constant of GaAs during a subpicosecond laser-induced phase transition," Phys. Rev. B 49(23), 16403-16406 (1994).
14. I. L. Shumay and U. Höfer, "Phase transformations of an InSb surface induced by strong femtosecond laser pulses," Phys. Rev. B 53(23), 15878-15884 (1996).
15. J. Bonse, S. M. Wiggins, and J. Solis, "Dynamics of phase transitions induced by femtosecond laser pulse irradiation of indium phosphide," Appl. Phys. A 80(2), 243-248 (2005).
16. M. B. Agranat et al., "Formation of absorbing heterogeneous plasma layer by femtosecond laser-induced melting and ablation of silicon," Appl. Phys. A 94(4), 879-887 (2009).
17. S. I. Kudryashov and V. I. Emel'yanov, "Band gap collapse and ultrafast cold melting of silicon during femtosecond laser pulse," JETP Lett. 73(5), 228-231 (2001). (Pubitemid 33603052)
18. D. H. Reitze et al., "Two-photon spectroscopy of silicon using femtosecond pulses at above gap frequencies," J. Opt. Soc. Am. B 7(1), 84-89 (1990).
19. A. Oschlies, R.W. Godby, and R. J. Needs, "First-principles self-energy calculations of carrier-induced band-gap narrowing in silicon," Phys. Rev. B 45(23), 13741-13744 (1992).
20. D. H. Kim, H. Ehrenreich, and E. Runge, "Band structure of femtosecond-laser-pulse excited GaAs," Sol. State Commun. 89(2), 119-123 (1994).
21. C. D. Spataru, L. X. Benedict, and S. G. Louie, "Ab initio calculation of band-gap renormalization in highly excited GaAs," Phys. Rev. B 69(20), 205204 (2004).
22. A. M.-T. Kim et al., "Ultrafast dynamics and phase changes in crystalline and amorphous GaAs," Phys. Rev. B 66(24), 245203 (2002).
23. S. I. Kudryashov et al., "Intraband and interband optical deformation potentials in femtosecond-laser-excited a-Te," Phys. Rev. B 75(8), 085207 (2007).
24. C. V. Shank, R. Yen, and C. Hirlimann, "Femtosecond-time-resolved surface structural dynamics of optically excited silicon," Phys. Rev. Lett. 51(10), 900-902 (1983).
25. H. W. K. Tom, G. D. Aumiller, and C. H. Briro-Cruz, "Time-resolved study of laser-induced disorder of Si surfaces," Phys. Rev. Lett. 60(14), 1438-1441 (1988).
26. P. Saeta et al., "Ultrafast electronic disordering during femtosecond laser melting of GaAs," Phys. Rev. Lett. 67(8), 1023-1026 (1991).
27. S. V. Govorkov et al., "Transient gratings and second-harmonic probing of the phase transformation of a GaAs surface under femtosecond laser irradiation," Phys. Rev. B 46(11), 6864-6868 (1992).
28. E. J. Yoffa, "Dynamics of dense laser-induced plasmas," Phys. Rev. B 21(6), 2415-2425 (1980).
29. A. Polkovnikov and G. Zegrya, "Electron-electron relaxation effect on auger recombination in direct-band semiconductors," Phys. Rev. B 64(7), 073205 (2001).
30. D. M. Riffe, "Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements," J. Opt. Soc. Am. B 19(5), 1092-1100 (2002).
31. J. M. Liu et al., "Phase-Transformation on and charged-particle emission from a silicon crystal-surface, induced by picosecond laser-pulses," Appl. Phys. Lett. 39(9), 755-757 (1981).
32. C. T. Hebeisen et al., "Direct visualization of charge distributions during femtosecond laser ablation of a Si (100) surface," Phys. Rev. B 78(8), 081403R (2008).
33. H. Rark and J. M. Zuo, "Direct measurement of transient electric fields induced by ultrafast pulsed laser irradiation of silicon," Appl. Phys. Lett. 94(25), 251103 (2009).
34. S. I. Kudryashov and V. I. Emel'yanov, "Electron gas compression and coulomb explosion in the surface layer of a conductor heated by femtosecond laser pulse," JETP Lett. 73(12), 666-670 (2001). (Pubitemid 33600167)
35. W. G. Roeterdink et al., "Coulomb explosion in femtosecond laser ablation of Si (111)," Appl. Phys. Lett. 82(23), 4190-4192 (2003).
36. S. Amoruso et al., "Study of the plasma plume generated during near IR femtosecond laser irradiation of silicon targets," Appl. Phys. A 79(4-6), 1377-1380 (2004).
37. A. V. Bulgakov, I. Ozerov, and W. Marine, "Silicon clusters produced by femtosecond laser ablation: non-thermal emission and gas-phase condensation," Appl. Phys. A 79(4), 1591-1594 (2004);
38. A. V. Bulgakov, I. Ozerov, and W. Marine, "Cluster emission under femtosecond laser ablation of silicon," Thin Sol. Films 453, 557-561 (2004).
39. N. M. Bulgakova et al., "Electronic transport and consequences for material removal in ultrafast pulsed laser ablation of materials," Phys. Rev. B 69(5), 054102 (2004).
40. H. Dachraoui and W. Husinsky, "Thresholds of plasma formation in silicon identified by optimizing the ablation laser pulse form," Phys. Rev. Lett. 97(10), 107601 (2006);
41. H. Dachraoui, W. Husinsky, and G. Betz, "Ultra-short laser ablation of metals and semiconductors: evidence of ultra-fast coulomb explosion," Appl. Phys. A 83(2), 333-336 (2006).
42. J. P. Callan et al., "Universal dynamics during and after ultrafast laserinduced semiconductor-to-metal transitions," Phys. Rev. B 64(7), 073201 (2001).
43. E. Yablonovich and N. Bloembergen, "Avalanche ionization and the limiting diameter of filaments induced by light pulses in transparent media," Phys. Rev. Lett. 29(14), 907-910 (1972).
44. S. C. Jones et al., "Recent progress on laser-induced modifications and intrinsic bulk damage of wide-gap optical materials," Opt. Eng. 28, 1039-1068 (1989).
45. M. Lenzner et al., "Femtosecond optical breakdown in dielectrics," Phys. Rev. Lett. 80(18), 4076-4079 (1998) (Pubitemid 128621855)
46. D. Du et al., "Laser-induced breakdown by impact ionization in SiO2 with pulse widths from 7 ns to 150 fs," Appl. Phys. Lett. 64(23), 3071-3074 (1994).
47. T. Kurosawa, "Notes on the theory of hot electrons in semiconductors," J. Phys Soc. Jpn. 20(6), 937-942 (1965).
48. L. H. Holway, J. Appl Phys. 45, 677 (1974);46, 279 (1975).
49. G. E. Uhlenbeck and L. S. Ornstein, Phys. Rev. B 36, 823 (1930).
50. M. Sparks et al., "Theory of electron-avalanche breakdown in solids," Phys. Rev. B 24(6), 3519-3536 (1981).
51. M. V. Fischetti et al., "Theory of high-field electron transport in silicon dioxide," Phys. Rev. B 31(12), 8124-8142 (1985).
52. E. M. Epstein, Sov. Phys. Solid State 11, 2213 (1970).
53. V. I. Mel'nikov, "Quantum kinetic equation for electrons in a highfrequency field," JETP Lett. 9, 120-122 (1969).
54. A. S. Epifanov, A. A. Manenkov, and A. M. Prokhorov, "Theory of avalanche ionization in transparent dielectrics induced by electromagnetic field," Sov. Phys. JETP 43, 377 (1976).
55. B. C. Stuart et al., "Laser-induced damage in dielectrics with nanosecond to subpicosecond pulses," Phys. Rev. Lett. 74(12), 2248-2251 (1995)
56. B. C. Stuart et al., "Nanosecond-to-femtosecond laser-induced breakdown in dielectrics," Phys. Rev. B 53(4), 1749-1761 (1996).
57. A. Kaiser et al., "Microscopic processes in dielectrics under irradiation by subpicosecond laser pulses," Phys. Rev. B 61(17), 11437-11450 (2000).
58. K.-F. Berggren and B. E. Sernelius, "Band-gap narrowing in heavily doped many-valley semiconductors," Phys. Rev. B 24(4), 1971-1986 (1981).
59. P. A. Wolf, "Theory of the band structure of very degenerate semiconductors," Phys. Rev. 126(2), 405-412 (1962).
60. R. A. Abraham, G. N. Childs, and P. A. Saunderson, "Band gap narrowing due to many-body effects in silicon and gallium arsenide," J. Phys C Solid State Phys. 17(34), 6105 (1984).
61. H. Haug and S. Schmitt-Rink, "Basic mechanisms of the optical nonlinearities of semiconductors near the band edge," J. Opt Soc. Am. B 2(7), 1135-1142 (1985).
62. T. Apostolova et al., "Effect of laser-induced antidiffusion on excited conduction electron dynamics in bulk semiconductors," Phys. Rev. B 66(7), 075208 (2002).
63. W. Quade and E. Schöll, "Quantum theory of impact ionization in coherent high-field semiconductor transport," Phys. Rev. B 50(11), 7398-7412 (1994).
64. K. Sokolowski-Tinten et al., "Observation of a transient insulating phase of metals and semiconductors during short-pulse laser ablation," Appl. Surf. Sci. 127-129, 755-760 (1998). (Pubitemid 128422418)
65. S. I. Kudryashov and V. I. Emel'yanov, "Structural transitions in Si pumped by femtosecond laser pulse: the role of electron-hole plasma and phonon-phonon anharmonicity," JETP 94(1), 94-107 (2002).
66. J. P. Colombier et al., "Optimized energy coupling at ultrafast laserirradiated metal surfaces by tailoring intensity envelopes: consequences for material removal from Al samples," Phys. Rev. B 74(22), 224106 (2006).
67. O. S. Heavens, Optical Properties of Thin Solid Films, Butterworths Scientific Publications, London (1955).
68. E. D. Palik, Ed., Handbook of Optical Constants of Solids, Academic Press, Orlando (1998).
69. A. Dargys and J. Kundrotas, Handbook on Physical Properties of Ge, Si, GaAs, and InP, Science and Encyclopedia Publishers, Vilnius (1994).
70. F. Kadlec, H. Nemec, and P. Kužel, "Optical two-photon absorption in GaAs measured by optical-pump terahertz-probe spectroscopy," Phys. Rev. B 70(12), 125205 (2004).
71. A. Saissy et al., "Absolute measurement of the 1.06μm two-photon absorption coefficient in GaAs," Appl. Phys. 15(1), 99-102 (1978). (Pubitemid 8576215)
72. K. Sokolowski-Tinten and D. von der Linde, "Generation of dense electron-hole plasmas in silicon," Phys. Rev. B 61(4), 2643-2650 (2000).
73. K. Sokolowski-Tinten et al., "Dynamics of ultrafast phase changes in amorphous GeSb films," Phys. Rev. Lett. 81(17), 3679-3682 (1998). (Pubitemid 128629588)
74. T. Y. Choi and C. P. Grigoropoulos, "Plasma and ablation dynamics in ultrafast laser processing of crystalline silicon," J. Appl Phys. 92(9), 4918-4925 (2002).
75. J.-Y. Bigot et al., "Two-dimensional carrier-carrier screening in a quantum well," Phys. Rev. Lett. 67(5), 636-639 (1991).
76. P. Stampfli and K. H. Bennemann, "Time dependence of the laserinduced femtosecond lattice instability of Si and GaAs: role of longitudinal optical distortions," Phys. Rev. B 49(11), 7299-7305 (1994).
77. V. I. Emel'yanov and D. V. Babak, "Ultrafast vibronic phase transitions induced in semiconductors by femtosecond laser pulses," Phys. Solid State 41(8), 1338-1342 (1999).
78. T. Dumitrica and R. E. Allen, "Femtosecond-scale response of GaAs to ultrafast laser pulses," Phys. Rev. B 66(8), 081202(R) (2002).
79. A. D. Bristow, N. Rotenberg, and H. M. van Driel, "Two-photon absorption and Kerr coefficients of silicon for 850-2200 nm," Appl. Phys. Lett. 90(19), 191104 (2007).
80. L. D. Landau and E. M. Lifshitz, Statistical Physics, Course of Theoretical Physics Vol. 5, 3rd ed., Butterworth-Heinemann, New York (1980).
81. C. Thomsen et al., "Surface generation and detection of phonons by picosecond light pulses," Phys. Rev. B 34(6), 4129-4138 (1986).
82. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, Springer, Berlin (1999).
83. E. Anastassis and M. Cardona, "Internal strains and Raman-active optical phonons," Phys. Stat. Sol. (b) 104(2), 589-600 (1981).
84. K. L. I. Kobayashi et al., Phys. Rev. Lett. 37(12), 472 (1976).
85. G. C. Cho, W. Kutt, and H. Kurz, "Subpicosecond time-resolved coherent-phonon oscillations in GaAs," Phys. Rev. Lett. 65(6), 764-766 (1990).
86. M. Hase et al., "Ultrafast carrier and plasmon-phonon dynamics in ionirradiated n-GaAs," Appl. Phys. Lett. 82(21), 3668-3670 (2003).
87. O. V. Misochko, M. Hase, and M. Kitajima, "Phonon autoecho in bismuth and antimony single crystals," JETP Lett. 78(2), 75-79 (2003). (Pubitemid 40830395)
88. S. I. Kudryashov, "Some effects affecting laser-induced damage of solid dielectrics excited by ultrashort laser pulses," Proc. SPIE 5710, 5710-5729 (2005).
89. J. F. Young and H. M. van Driel, "Ambipolar diffusion of high-density electrons and holes in Ge, Si, and GaAs: many-body effects," Phys. Rev. B 26(4), 2147-2158 (1982).
90. A. Aydinli et al., "Induced absorption in silicon under intense laser excitation: evidence for a self-confined plasma," Phys. Rev. Lett. 46(25), 1640 (1981).
91. S. Marchetti, M. Martinelli, and R. Simili, "The InSb auger recombination coefficient derived from the IR-FIR dynamical plasma reflectivity," J. Phys. Condens. Matter 13(33), 7363-7368 (2001).
92. S. Marchetti, M. Martinelli, and R. Simili, "The auger recombination coefficient in InAs and GaSb derived from the infrared dynamical plasma reflectivity," J. Phys. Condens. Matter 14(13), 3653-3656 (2002). (Pubitemid 34404615)
93. S. Anikeev et al., "Measurement of the auger recombination rate in p-type 0.54 eV GaInAsSb by time-resolved photoluminescence," Appl. Phys. Lett. 83(16), 3317-3319 (2003).
94. U. Strauss,W.W. Ruhle, and K. Kohler, "Auger recombination in intrinsic GaAs," Appl. Phys. Lett. 62(1), 55-57 (1993).
95. F. K. Reinhart, "Direct determination of the free-carrier injection density, the free-carrier absorption, and the recombination factors in double heterostructure diodes by optical phase measurements. Part III," J. Appl Phys. 97(12), 123536 (2005).