SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 8, 2009, Pages

Ultrafast carrier relaxation in Si studied by time-resolved two-photon photoemission spectroscopy: Intravalley scattering and energy relaxation of hot electrons

(2) Ichibayashi, T a Tanimura, K a

a OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRONS; EMISSION SPECTROSCOPY; HOT ELECTRONS; LUMINESCENCE OF ORGANIC SOLIDS; PHOTOEMISSION; PHOTONS; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS;

CONDUCTION-BAND MINIMUMS; DYNAMICAL RELAXATIONS; ELECTRON DISTRIBUTIONS; ENERGY RELAXATIONS; EXCESS ENERGIES; TIME CONSTANTS; TIME-RESOLVED; TWO-PHOTON PHOTOEMISSIONS; ULTRAFAST CARRIER RELAXATIONS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 61649111425 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.102.087403 Document Type: Article

Times cited : (57)

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