Ab initio calculation of band-gap renormalization in highly excited GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 20, 2004, Pages

  Spataru, Catalin D ^a,b   Benedict, Lorin X ^c   Louie, Steven G ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM;

AB INITIO CALCULATION; ARTICLE; CRYSTAL; ELECTRIC CONDUCTIVITY; ELECTRON; ENERGY; EQUILIBRIUM CONSTANT; LASER;

EID: 37649032547     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.205204     Document Type: Article

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25. We stress that the occupation number distribution f(E) entering our calculation is assumed rather than calculated. In principle, f(E) should be determined self-consistently, but the computational rigors of such a calculation preclude us from doing this here. The f(E) is therefore an input to our calculation of handgap renormalization.
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