Direct evidences of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 8, 2009, Pages 4673-4678

  Gonzalez J C ^a,c   Malachias, A ^b   Andrade, R Ribeiro ^a   De Sousa, J C ^a   Moreira, M V B ^a   De Oliveira, A G ^a  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^c UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

EDS; GID; Growth; InAs nanowires; Molecular beam epitaxy

Indexed keywords

EDS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GAAS; GID; GRAZING INCIDENCE; GROWTH; GROWTH MODELS; HETEROEPITAXY; INAS; INAS NANOWIRES; INTER-DIFFUSION; MODERATE TEMPERATURE; NANOWIRE GROWTH; SUBSTRATE MATERIAL; VAPOR-LIQUID-SOLID GROWTH; VERTICALLY ALIGNED; X-RAY DIFFRACTION MEASUREMENTS;

ELECTRIC WIRE; EPITAXIAL GROWTH; GALLIUM; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WIRES; X RAY SPECTROSCOPY;

MOLECULAR BEAMS;

EID: 70350367976     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1285     Document Type: Article

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