The roles of shallow and deep levels in the recombination behavior of polycrystalline silicon on glass solar cells

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 8, 2012, Pages 915-922

  Wong, Johnson ^a   Huang, Jialiang ^a   Varlamov, Sergey ^a   Green, Martin A ^a   Keevers, Mark ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b CSG Solar Pty Ltd   (Australia)

Author keywords

extended defect; polycrystalline silicon; potential fluctuation; solar cell

Indexed keywords

CHARGED DISLOCATIONS; DEEP-LEVELS; DISLOCATION DENSITIES; ELECTRONIC LEVELS; EXTENDED DEFECT; FORMER PROCESS; GLASS SOLAR CELLS; POLYCRYSTALLINE SILICON ON GLASS; POTENTIAL FLUCTUATIONS; RECOMBINATION CURRENTS;

DEFECTS; GRAIN BOUNDARIES; POLYSILICON;

SOLAR CELLS;

EID: 84870054917     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1154     Document Type: Article

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