Growth and optical characterisation of multilayers of InGaN quantum dots

Journal of Crystal Growth

Volumn 338, Issue 1, 2012, Pages 262-266

  Zhu, Tongtong ^a   El Ella, Haitham A R ^a   Reid, Benjamin ^b   Holmes, Mark J ^b   Taylor, Robert A ^b   Kappers, Menno J ^a   Oliver, Rachel A ^a  

^a Department of Materials Science and Metallurgy ^*  (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

A1. Photoluminescence; A3. Metal organic vapour phase epitaxy; B1. Nitrides; B2. InGaN quantum dots

Indexed keywords

CAPPED SAMPLES; HIGHER TEMPERATURES; INGAN EPILAYERS; INGAN QUANTUM DOTS; METAL-ORGANIC VAPOUR PHASE EPITAXY; MICROPHOTOLUMINESCENCE; MULTIPLE LAYERS; OPTICAL CHARACTERISATION; PER UNIT; QD EMISSIONS; SHARP EMISSION; SINGLE QD; THIN LAYERS; THREE-LAYER; TWO-TEMPERATURE;

EPILAYERS; GALLIUM NITRIDE; GROWTH TEMPERATURE; NANOSTRUCTURES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; VAPOR PHASE EPITAXY;

OPTICAL MULTILAYERS;

EID: 84655161931     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.11.001     Document Type: Article

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