An easy method for the room-temperature growth of spongelike nanostructured Zn films as initial step for the fabrication of nanostructured ZnO

Thin Solid Films

Volumn 524, Issue , 2012, Pages 107-112

  Gazia, Rossana ^a   Chiodoni, Angelica ^a   Bianco, Stefano ^a   Lamberti, Andrea ^a,b   Quaglio, Marzia ^a   Sacco, Adriano ^a,b   Tresso, Elena ^a,b   Mandracci, Pietro ^b   Pirri, Candido Fabrizio ^a,b  

^a ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

^b POLITECNICO DI TORINO   (Italy)

Author keywords

Crystal structure; Metals; Nanostructures; Physical vapor deposition processes; Semiconducting II VI materials; Zinc compounds

Indexed keywords

DEPOSITION TIME; DYE-SENSITIZED SOLAR CELL; MORPHOLOGICAL FEATURES; NANO-STRUCTURED; NANOSTRUCTURED FILMS; PHOTOANODE; PHYSICAL AND CHEMICAL CHARACTERISTICS; PHYSICAL VAPOR DEPOSITION PROCESS; PROCESS PARAMETERS; RADIO FREQUENCY POWER; ROOM TEMPERATURE; SEMICONDUCTING II-VI MATERIALS; SPUTTERING PROCESS; THERMAL ANNEALING PROCESS; ZNO;

AUTOMOBILE MANUFACTURE; CRYSTAL STRUCTURE; FILM GROWTH; METALS; SOLAR CELLS; THICKNESS MEASUREMENT; ZINC COMPOUNDS; ZINC OXIDE;

NANOSTRUCTURES;

EID: 84869490843     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.09.076     Document Type: Article

References (33)

1. Q. Zhang, C.S. Dandeneau, X. Zhou, and G. Cao Adv. Mater. 21 2009 4087
2. R. Jose, V. Thavasi, and S. Ramakrishna J. Am. Ceram. Soc. 92 2009 289
3. M. Saito, and S. Fujihara J. Ceram. Soc. Jpn. 117 2009 823
4. Q. Wan, Q.H. Li, Y.J. Chen, T.H. Wang, X.L. He, J.P. Li, and C.L. Lin Appl. Phys. Lett. 84 2004 3654
5. S. Vijayanand, P.A. Joy, H.S. Potdar, D. Patil, and P. Patil Sensors Actuators B Chem. 152 2011 121
6. C.-H. Chen, S.-J. Chang, S.-P. Chang, M.-J. Li, I.-C. Chen, T.-J. Hsueh, and C.-L. Hsu Appl. Phys. Lett. 95 2009 223101
7. A.B.F. Martinson, J.W. Elam, J.T. Hupp, and M.J. Pellin Nano Lett. 7 2007 2183
8. C.-H. Ku, and J.-J. Wu Appl. Phys. Lett. 91 2007 093117-1
9. A.-J. Cheng, Y. Tzeng, Y. Zhou, M. Park, T.-h. Wu, C. Shannon, D. Wang, and W. Lee Appl. Phys. Lett. 92 2008 092113-1
10. Q. Wan, C.L. Lin, X.B. Yu, and T.H. Wang Appl. Phys. Lett. 84 2004 124
11. B.D. Yao, Y.F. Chan, and N. Wang Appl. Phys. Lett. 81 2002 757
12. L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi Appl. Phys. Lett. 86 2005 024108-1
13. Y.C. Kong, D.P. Yu, B. Zhang, W. Fang, and S.Q. Feng Appl. Phys. Lett. 78 2001 407
14. Z.W. Li, W. Gao, and R.J. Reeves Surf. Coat. Technol. 198 2005 319
15. H. Chen, A. Du Pasquier, G. Saraf, J. Zhong, and Y. Lu Semicond. Sci. Technol. 23 2008 045004-1
16. C.J. Lee, T.J. Lee, S.C. Lyu, Y. Zhang, H. Ruh, and H.J. Lee Appl. Phys. Lett. 81 2002 3648
17. H. Yu, Z. Zhang, M. Han, X. Hao, and F. Zhu J. Am. Ceram. Soc. 127 2005 2378
18. D.V. Bavykin, J.M. Friedrich, and F.C. Walsh Adv. Mater. 18 2006 2807
19. S. Komarneni Curr. Sci. 85 2003 1730
20. M.A. Baker, W. Gissler, S. Klose, M. Trampert, and F. Weber Surf. Coat. Technol. 125 2000 207
21. K.B. Sundaram, and A. Khan Thin Solid Films 295 1997 87
22. Z.X. Chen, B. Lu, Q. Huang, L. Wang, and B. Huang Mater. Sci. Eng. B 117 2005 81
23. A.F. Jankowski, and J.P. Hayes J. Vac. Sci. Technol. A 21 2003 422
24. J.A. Thornton Annu. Rev. Mater. Sci. 7 1977 239
25. J. Musil, J. Matouš, and V. Valvoda Vacuum 46 1995 203
26. K. Keis, E. Magnusson, H. Lindström, S.-E. Lindquist, and A. Hagfeldt Sol. Energy Mater. Sol. Cells 73 2002 51
27. A. Lamberti, R. Gazia, A. Sacco, S. Bianco, M. Quaglio, A. Chiodoni, E. Tresso, C. F. Pirri, to be published in Prog. Photovolt.: Res. Appl., DOI: http://dx.doi.org/10.1002/pip. 2251, http://onlinelibrary.wiley.com/doi/10.1002/ pip.2251/abstract.
28. J.C. Klein, and D.M. Hercules J. Catal. 82 1983 424
29. M. Chen, X. Wang, Y.H. Yu, Z.L. Pei, X.D. Bai, C. Sun, R.F. Huang, and L.S. Wen Appl. Surf. Sci. 158 2000 134
30. L. Avalle, E. Santos, E. Leiva, and V.A. Macagno Thin Solid Films 219 1992 7
31. I. Petrov, P.B. Barna, L. Hultman, and J.E. Greene J. Vac. Sci. Technol. A 21 2003 S117
32. The assignments of Zn and ZnO phase were based on the Joint Committee on Powder Diffraction Standards (JCPDS) database - International Center for Diffraction Data, 1998, PCPDFWIN v. 2.01. The JCPDS card number of Zn is 65-3358 and JCPDS card number of ZnO is 89-1397.
33. M.F. Wu, A. Vantomme, H. Pattyn, G. Langouche, Q. Yang, and Q. Wang J. Appl. Phys. 80 1996 5713