Nonlinear absorption at optical telecommunication wavelengths of InN films deposited by RF sputtering

IEEE Photonics Technology Letters

Volumn 24, Issue 22, 2012, Pages 1998-2000

  Valdueza Felip, Sirona ^a   Monteagudo Lerma, Laura ^b   Mangeney, Juliette ^c   Gonzalez Herraez, Miguel ^b   Julien, François H ^c   Naranjo, Fernando B ^b  

^a CEA GRENOBLE   (France)

^b UNIVERSITY OF ALCALÁ   (Spain)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Indium nitride; nonlinear absorption; nonlinear optical devices; pump probe; sputtering

Indexed keywords

ALL-OPTICAL DEVICE; FREE CARRIER ABSORPTION; GAN TEMPLATE; INDIUM NITRIDE; INN FILMS; LOW-COST TECHNOLOGY; NON-LINEAR RESPONSE; NONLINEAR ABSORPTION COEFFICIENT; NONLINEAR ABSORPTIONS; NONLINEAR BEHAVIOR; NONLINEAR OPTICAL ABSORPTION; NONLINEAR OPTICAL DEVICES; OPTICAL TELECOMMUNICATION; PHOTOGENERATED CARRIERS; PUMP-PROBE; PUMP-PROBE TECHNIQUE; RADIO-FREQUENCY SPUTTERING; RF-SPUTTERING; TWO-PHOTON ABSORPTIONS; ULTRA-FAST;

DEPOSITS; GALLIUM NITRIDE; LIGHT ABSORPTION; OPTICAL DEVICES; SPUTTERING; TWO PHOTON PROCESSES;

NONLINEAR OPTICS;

EID: 84869472952     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2217484     Document Type: Article

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