Enhanced optical power of inGaN/GaN light-emitting diode by ALGaN interlayer and electron blocking layer

IEEE Photonics Technology Letters

Volumn 24, Issue 22, 2012, Pages 1991-1994

  Lee, Sang Jun ^a   Cho, Chu Young ^a   Hong, Sang Hyun ^a   Han, Sang Heon ^b   Yoon, Sukho ^b   Kim, Sung Tae ^b   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

AlGaN interlayer; electron blocking layer (EBL); InGaN; light emitting diodes (LEDs)

Indexed keywords

AL COMPOSITION; ALGAN; BAND DIAGRAMS; ELECTRON BLOCKING LAYER; HOLE BARRIER; HOLE DISTRIBUTION; HOLE INJECTION; INGAN; INGAN/GAN; OPTICAL OUTPUT POWER; OPTICAL POWER; RADIATIVE RECOMBINATION RATE;

DIODES; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84869402589     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2217125     Document Type: Article

References (17)

1. E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart Science, vol. 308, pp. 1274-1278, May 2005. (Pubitemid 40746117)
2. S.-M. Pan, R.-C. Tu, Y.-M. Fan, R.-C. Yeh, and J.-T. Hsu, "Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tinoxide transparent ohmic contacts IEEE Photon. Technol. Lett., vol. 15, no. 5, pp. 649-651, May 2003.
3. H.-W. Huang, C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, "Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface IEEE Photon. Technol. Lett., vol. 17, no. 5, pp. 983-985, May 2005. (Pubitemid 40699847)
4. J. Y. Kim, M. K. Kwon, K. S. Lee, S. J. Park, S. H. Kim, and K. D. Lee, "Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal Appl. Phys. Lett., vol. 93, no. 18, pp. 181109-1- 181109-3, 2007.
5. Y.-K. Kuo, J.-Y. Chang, M.-C. Tsai, and S.-H. Yen, "Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers Appl. Phys. Lett., vol. 95, no. 1, pp. 011116-1-011116-3, 2009.
6. J.-Y. Zhang, et al., "Efficient hole transport in asymmetric coupled InGaN multiple quantum wells Appl. Phys. Lett., vol. 95, no. 16, pp. 161110-1-161110-3, 2009.
7. K. H. Kim, Z. Y. Fan, M. Khizar, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers Appl. Phys. Lett., vol. 85, no. 20, pp. 4777-4779, 2004. (Pubitemid 40009689)
8. S. Grzanka, et al., "Role of the electron blocking layer in the lowtemperature collapse of electroluminescence in nitride light-emitting diodes Appl. Phys. Lett., vol. 90, no. 10, pp. 103507-1-103507-3, 2007.
9. K. B. Lee, et al., "Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes J. Cryst. Growth, vol. 311, no. 10, pp. 2857-2859, 2009.
10. J. Li, T. N. Oder, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Optical and electrical properties of Mg-doped p-type AlxGa1x N Appl. Phys. Lett., vol. 80, no. 7, pp. 1210-1212, 2002.
11. S. H. Han, et al., "Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes Appl. Phys. Lett., vol. 94, no. 23, pp. 231123-1-231123-3, 2009.
12. S. Choi, et al., "Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electronblocking layer Appl. Phys. Lett., vol. 96, no. 22, pp. 221105-1-221105- 3, 2010.
13. Y. K. Kuo, M. C. Tsai, and S. H. Yen, "Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer Opt. Commun., vol. 282, no. 21, pp. 4252-4255, 2009.
14. C. H. Wang, et al., "Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer Appl. Phys. Lett., vol. 97, no. 26, pp. 261103-1-261103-3, 2010.
15. N. Zhang, et al., "Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes Appl. Phys. Lett., vol. 100, no. 5, pp. 053504-1-053504-3, 2012.
16. M. Katsuragawa, et al., "Thermal ionization energy of Si and Mg in AlGaN J. Cryst. Growth, vols. 189-190, pp. 528-531, Jun. 1998. (Pubitemid 128420808)
17. E. F. Schubert, Light-Emitting Diodes. Cambridge, U.K.: Cambridge Univ. Press, 2003.