Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2857-2859

  Lee, K B ^a   Parbrook, P J ^a   Wang, T ^a   Bai, J ^a   Ranalli, F ^a   Airey, R J ^a   Hill, G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. AlGaN; B3. Light emitting diodes

Indexed keywords

A3. METALORGANIC VAPOR PHASE EPITAXY; A3. QUANTUM WELLS; ALGAN; B1. ALGAN; B3. LIGHT-EMITTING DIODES; CARRIER TRANSPORT PROCESS; DEEP LEVEL; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRON BLOCKING LAYER; ELECTRON OVERFLOW; EMISSION INTENSITY; IDEALITY FACTORS; P-TYPE; SINGLE QUANTUM WELL; TUNNELING MECHANISM; ULTRAVIOLET LIGHT-EMITTING DIODES;

CRYSTAL GROWTH; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRONS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; TUNNELING (EXCAVATION); ULTRAVIOLET RADIATION; VAPORS;

LIGHT EMITTING DIODES;

EID: 65749106577     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.030     Document Type: Article

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