SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

Excellent passivation of p + silicon surfaces by inline plasma enhanced chemical vapor deposited SiO x/AlO x stacks

(6) Lin, Fen a Duttagupta, Shubham a Shetty, Kishan D a Boreland, Matthew a Aberle, Armin G a Hoex, Bram a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITED; EMITTER SATURATION CURRENT DENSITY; FIRING PROCESS; FORMING GAS; HIGH-EFFICIENCY SOLAR CELLS; LAYER THICKNESS; SILICON SURFACES; SURFACE PASSIVATION;

BORON; DEPOSITS; INDUSTRY; VAPORS;

SILICON OXIDES;

EID: 84869142216 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.10NA17 Document Type: Article

Times cited : (7)

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