Effects of surface temperature on high-rate etching of silicon by narrow-gap microwave hydrogen plasma

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

  Yamada, Takahiro ^a,b   Ohmi, Hiromasa ^a,b   Okamoto, Kohei ^a   Kakiuchi, Hiroaki ^a,b   Yasutake, Kiyoshi ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH RATES; HIGH RATE; HIGH-RATE ETCHING; HYDROGEN CONCENTRATION; LOW PRESSURE PLASMA; MICROWAVE HYDROGEN PLASMAS; OPTIMUM TEMPERATURE; REACTION MECHANISM; REACTION PROCESS; SURFACE TEMPERATURES; TEMPERATURE INCREASE;

ACTIVATION ENERGY; ATMOSPHERIC TEMPERATURE; DESORPTION; ETCHING; HYDROGEN; VOLTAGE DIVIDERS;

SURFACE PROPERTIES;

EID: 84869107010     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.10NA09     Document Type: Article

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