Texture etching of Si with atomic hydrogen generated by hot wire method through SiO2 masks for solar cell applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 10 A, 2007, Pages 6796-6800

  Sato, Takehiko ^a   Sugiura, Tsutomu ^b   Ohtsubo, Michio ^b   Matsuno, Shigeru ^a   Konagai, Makoto ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Atomic hydrogen; Etching; Light trapping; Silicon solar cell; Texture

Indexed keywords

CONCENTRATION (PROCESS); ETCHING; MASKS; SILICA; SILICON SOLAR CELLS; TEXTURES;

ALKALI ETCHING; ATOMIC HYDROGEN; MULTICRYASTALLINE SUBSTRATES; SILICA PARTICLES;

SINGLE CRYSTALS;

EID: 35348821748     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6796     Document Type: Article

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