Ultrafast exciton dynamics in silicon nanowires

Journal of Physical Chemistry Letters

Volumn 3, Issue 6, 2012, Pages 766-771

  Wheeler, Damon A ^a   Huang, Jian An ^b   Newhouse, Rebecca J ^a   Zhang, Wen Feng ^b   Lee, Shuit Tong ^b   Zhang, Jin Z ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP TRAPS; EXCITATION INTENSITY; EXCITON DYNAMICS; EXCITON-EXCITON ANNIHILATION; EXPERIMENTAL DYNAMICS; FEMTOSECOND TRANSIENT ABSORPTION; GAIN INSIGHT; INTENSITY-DEPENDENT; KINETIC MODELS; NONLINEAR PROCESS; PHOTOPHYSICAL PROCESS; PROBE WAVELENGTH; SHALLOW TRAPS; SILICON NANOWIRES; TIME CONSTANTS; TRAP STATE; ULTRA-FAST;

BLEACHING; CLEANING; DYNAMICS; NANOWIRES; PHOTOEXCITATION; SURFACE PROPERTIES;

EXCITONS;

EID: 84863351917     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz201597j     Document Type: Article

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