In-situ electrical studies of ozone based atomic layer deposition on graphene

ECS Transactions

Volumn 45, Issue 4, 2012, Pages 39-46

  Jandhyala, S ^a   Mordi, G ^a   Lee, B ^a,b   Kim, J ^a  

^a The University of Texas at Dallas   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHENE; GRAPHENE TRANSISTORS; OZONE; OZONE LAYER; PHYSISORPTION;

CHEMICAL VAPOR DEPOSITED; DYNAMIC ENVIRONMENTS; ELECTRICAL STUDIES; FUNCTIONALIZATIONS; GRAPHENE FIELD EFFECT TRANSISTOR (GFETS); OZONE EXPOSURES; OZONE TREATMENT; TRANSPORT CHARACTERISTICS;

ATOMIC LAYER DEPOSITION;

EID: 84869013248     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3700451     Document Type: Conference Paper

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