Ozone based atomic layer deposition of high-k dielectrics for graphene device applications

2010 10th IEEE Conference on Nanotechnology, NANO 2010

Volumn , Issue , 2010, Pages 462-465

  Mordi, G ^a   Lee, B ^a   Jandhyala, S ^a   Kim, J ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANES; CONFORMAL DEPOSITION; GRAPHENE DEVICES; GROWTH MECHANISMS; HIGH-K DIELECTRIC; HIGHLY ORDERED PYROLYTIC GRAPHITES; NUCLEATION SITES; SEED LAYER; STEP EDGE; TRIMETHYLALUMINUM;

ALUMINUM; ATOMIC LAYER DEPOSITION; GRAPHENE; NANOTECHNOLOGY; NUCLEATION; OZONE; PYROLYSIS; THERMOANALYSIS;

OZONE LAYER;

EID: 79951829326     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2010.5697781     Document Type: Conference Paper

References (7)

1. B. Lee, S. Park, H. Kim, K.J Cho, E. Vogel, M.J Kim, R.M Wallace, and J. Kim. Appl. Phys. Letter, 92, 203102 (2008)
2. B. Lee, G. Mordi, T.Park, K.J Cho, E. Vogel, M.J Kim, L. Colombo R.M Wallace, and J. Kim, ECS transaction, 19, 225 (2009)
3. B. Lee, G. Mordi, T.Park, K. J Cho, E. Vogel, M. J Kim, L. Colombo R.M Wallace, and J. Kim. Appl. Phys. Lett. 97 (4), (2010)
4. Y.M Lin, K.A Jenkins, A. Valdes-Garcia, J.P Small, D.B Farmer, and P. Avouris. Nano Lett. 9, 422-426 (2009)
5. X. Wang, S.M Tabakman, and Dai, H, J. Am. Chem. Soc., 130, 8152-8153 (2008)
6. S.Kim, J.Nah, I. Jo, D.Shahrjerdi, L.Colombo, Z.Yao, E.Tutuc, and K.S Banerjee. Appl. Phys. Lett. 94, 062107 (2009)
7. G. Lee, B. Lee, J.Kim, K.J Cho, J Phys Chem. C113, 14225 (2009)